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Advance Product Information
October 28, 2005
32 - 45 GHz Wide Band Driver Amplifier
Key Features
* * * * * * * *
TGA4521
Frequency Range: 32 - 45 GHz 25 dBm Nominal Psat @ 38 GHz 24 dBm P1dB @ 38 GHz 16 dB Nominal Gain @ 38 GHz 33 dBm OTOI @ 16dBm/Tone Bias: 6 V @ 175 mA Idq 0.15 um 3MI pHEMT Technology Chip Dimensions 1.60 x 0.75 x 0.10 mm (0.063 x 0.030 x 0.004 in)
Product Description
The TriQuint TGA4521 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint's 0.15um power pHEMT production process. The TGA4521 nominally provides 25 dBm saturated output power, and 24 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 16 dB.
Primary Applications
* * * * Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM
Measured Fixtured Data
25 20 S-Parameters (dB) 15 10 5 0 -5 -10 -15 32
27 26 Output Power (dBm) 25 24 23 22 21 20 19 32 34 36 38 40 42 44 46 48 Frequency (GHz)
Bias Conditions: Vd = 6 V, Idq = 175 mA
Gain
The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications. The TGA4521 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-Free & RoHS compliant.
IRL ORL
34 36 38 40 42 44 46 48
Frequency (GHz)
Psat P1dB
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
TGA4521
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
PARAMETER
VALUE
6.5 V -2 TO 0 V 350 mA 9 mA 20 dBm See note 4/ 150 C 320 0C -65 to 150 0C
0
NOTES
2/
2/ 3/ 3/
2/ 5/ 6/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C - TBASE 0C) / 70 (0C/W) Where TBASE is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
6/
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
TGA4521
TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal)
PARAMETER
Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1dB Gain Compression, P1dB Saturated Power, Psat OTOI @ 16dBm/tone
TYPICAL
32 - 45 6.0 175 -0.7 16 6 10 24 25 33
UNITS
GHz V mA V dB dB dB dBm dBm dBm
TABLE III THERMAL INFORMATION
PARAMETER TEST CONDITIONS Vd = 6 V Id = 175 mA Pdiss = 1.05 W TCH O ( C) 144 RTJC (qC/W) 70 TM (HRS) 1.7E+6
RJC Thermal Resistance (channel to Case)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
Measured Data
Bias Conditions: Vd = 6 V, Idq = 175 mA
TGA4521
24 22 20 18 16 Gain (dB) 14 12 10 8 6 4 2 0 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
0 -2 -4 -6 Return Loss (dB) -8 -10 -12 -14 -16 -18 -20 -22 -24 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
4
IRL
ORL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
Measured Data
Bias Conditions: Vd = 6 V, Idq = 175 mA
TGA4521
28 27 26 Output Power (dBm) 25 24 23 22 21 20 19 18 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Frequency (GHz) P1dB Psat
26 24 22 20 Pout (dBm) 18 16 14 12 10 8 6 4 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Pin (dBm) POUT GAIN IDS
Freq = 38 GHz
400 375 350 325 300 275 250 225 200 175 150 125 IDS (mA)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
TGA4521
Measured Data
Bias Conditions: Vd = 6 V, Idq = 175 mA, f=10MHz
38 36 34 32 30 28 26 24 22 6 8 10 12 14 16 18 20 22 24 Output Power / tone
OTOI (dBm)
37 GHz 38 GHz 39 GHz 40 GHz
-10 -15 -20 -25 -30 -35 37 GHz -40 -45 -50 6 8 10 12 14 16 18 20 22 24 Output Power / tone
6
IMD3 (dBc)
38 GHz 39 GHz 40 GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
TGA4521
Mechanical Drawing
0.086 0.267 (0.003) (0.011)
0.346 (0.014)
1.167 (0.046)
1.316 (0.052)
1.490 (0.059)
0.750 (0.030) 0.651 (0.026) 0.651 (0.026)
0.353 (0.014)
RC B A
0.217 (0.009)
0
0
0.113 (0.004)
0.793 (0.031)
1.485 1.600 (0.058) (0.063)
Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2 Bond pad #3, 9 Bond pad #4, 5, 7 Bond pad #6 Bond pad #8 (RF In) (N/C) (Vg) (Vd) (N/C) (RF Out) 0.100 x 0.200 0.081 x 0.100 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 0.100 x 0.200 (0.004 x 0.008) (0.003 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.008)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
TGA4521
Recommended Chip Assembly Diagram
Vg
1.0 F 0.01 F 100pF 0.01 F 100pF
Vd
1.0 F
TFN
RC B
TFN
A
100pF
(Alternative Vg)
Vg
1.0 F 0.01 F
Bias Conditions: Vd = 6 V Vg = ~ -0.7 V to get 175mA Id
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
TGA4521 Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
0
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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